Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB100A10KRH8 Datenblatt(PDF) 1 Page - Cystech Electonics Corp. |
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MTB100A10KRH8 Datenblatt(HTML) 1 Page - Cystech Electonics Corp. |
1 / 10 page CYStech Electronics Corp. Spec. No. : C059H8 Issued Date : 2016.11.01 Revised Date : 2016.11.02 Page No. : 1/ 10 MTB100A10KRH8 CYStek Product Specification Dual N-Channel Enhancement Mode Power MOSFET MTB100A10KRH8 BVDSS 100V ID@VGS=10V, TC=25°C 8A 5.1A ID@VGS=10V, TC=100°C 2.7A ID@VGS=10V, TA=25°C Features 2.2A ID@VGS=10V, TA=70°C • Low On Resistance RDS(ON)@VGS=10V, ID=2A 100mΩ(typ) • Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=2A • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • Pb-free lead plating and Halogen-free package Equivalent Circuit Outline DFN5×6 MTB100A10KRH8 Ordering Information Device Package Shipping MTB100A10KRH8-0-T6-G DFN 5 ×6 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel 120mΩ(typ) G:Gate D:Drain S:Source Pin 1 Pin 1 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name |
Ähnliche Teilenummer - MTB100A10KRH8 |
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Ähnliche Beschreibung - MTB100A10KRH8 |
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