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LM199 Datenblatt(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Teilenummer LM199
Bauteilbeschribung  Precision Reference
Download  12 Pages
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Hersteller  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM199 Datenblatt(HTML) 4 Page - National Semiconductor (TI)

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Electrical Characteristics (Note 3) (Continued)
Parameter
Conditions
LM3999Z
Units
Min
Typ
Max
Initial Turn-On Current
9
≤ V
S ≤ 40, TA = 25˚C
140
200
mA
Electrical Characteristics (Notes 3, 6)
Parameter
Conditions
LM199AH, LM299AH
LM399AH
Units
Min
Typ
Max
Min
Typ
Max
Reverse Breakdown Voltage
0.5 mA
≤ I
R ≤ 10 mA
6.8
6.95
7.1
6.6
6.95
7.3
V
Reverse Breakdown Voltage
0.5 mA
≤ I
R ≤ 10 mA
6
9
6
12
mV
Change with Current
Reverse Dynamic Impedance
I
R = 1 mA
0.5
1
0.5
1.5
Reverse Breakdown
−55˚C
≤T
A≤+85˚C
LM199A
0.00002
0.00005
%/˚C
Temperature Coefficient
+85˚C
≤T
A≤+125˚C
0.0005
0.0010
%/˚C
−25˚C
≤T
A≤85˚C
LM299A
0.00002
0.00005
%/˚C
0˚C
≤T
A≤+70˚C
LM399A
0.00003
0.0001
%/˚C
RMS Noise
10 Hz
≤ f ≤ 10 kHz
7
20
7
50
µV
Long Term Stability
Stabilized, 22˚C
≤T
A≤28˚C,
20
20
ppm
1000 Hours, I
R=1mA±0.1%
Temperature Stabilizer
T
A=25˚C, Still Air, VS=30V
8.5
14
8.5
15
mA
Supply Current
T
A =− 55˚C
22
28
Temperature Stabilizer
9
40
9
40
V
Supply Voltage
Warm-Up Time to 0.05%
V
S = 30V, TA = 25˚C
3
3
sec.
Initial Turn-on Current
9
≤V
S≤40, TA=+25˚C, (Note 4)
140
200
140
200
mA
Note 2: The substrate is electrically connected to the negative terminal of the temperature stabilizer. The voltage that can be applied to either terminal of the refer-
ence is 40V more positive or 0.1V more negative than the substrate.
Note 3: These specifications apply for 30V applied to the temperature stabilizer and −55˚C
≤TA≤+125˚C for the LM199; −25˚C≤TA≤+85˚C for the LM299 and
0˚C
≤TA≤+70˚C for the LM399 and LM3999.
Note 4: This initial current can be reduced by adding an appropriate resistor and capacitor to the heater circuit. See the performance characteristic graphs to de-
termine values.
Note 5: Do not wash the LM199 with its polysulfone thermal shield in TCE.
Note 6: A military RETS electrical test specification is available for the LM199H/883, LM199AH/883, and LM199AH-20/883 on request.
Ordering Information
Initial
0˚C to +70˚C
−25˚C to +85˚C
−55˚C to +125˚C
NS
Tolerance
Package
2%
LM299AH
LM199AH, LM199AH/883
H04D
5%
LM399H
LM299H
H04D
LM399AH
5%
LM3999Z
Z03A
Certified Long Term Drift
The National Semiconductor LM199AH-20, LM299AH-20,
and LM399AH-50 are ultra-stable Zener references specially
selected from the production runs of LM199AH, LM299AH,
LM399AH and tested to confirm a long-term stability of 20,
20, or 50 ppm per 1000 hours, respectively. The devices are
measured every 168 hours and the voltage of each device is
logged and compared in such a way as to show the deviation
from its initial value. Each measurement is taken with a
probable-worst-case deviation of ±2 ppm, compared to the
Reference Voltage, which is derived from several groups of
NBS-traceable references such as LM199AH-20’s, 1N827’s,
and saturated standard cells, so that the deviation of any one
group will not cause false indications. Indeed, this compari-
son process has recently been automated using a specially
prepared computer program which is custom-designed to re-
ject noisy data (and require a repeat reading) and to record
the average of the best 5 of 7 readings, just as a sagacious
standards engineer will reject unbelievable readings.
The typical characteristic for the LM199AH-20 is shown be-
low. This computerized print-out form of each reference’s
stability is shipped with the unit.
www.national.com
4


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