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NBXSBA019LN1TAG Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer NBXSBA019LN1TAG
Bauteilbeschribung  3.3 V, 125 MHz / 250 MHz LVPECL Clock Oscillator
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NBXSBA019LN1TAG Datenblatt(HTML) 3 Page - ON Semiconductor

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NBXDBA019, NBXHBA019, NBXSBA019
http://onsemi.com
3
Table 6. DC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 2)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
IDD
Power Supply Current
78
100
mA
VIH
OE and FSEL Input HIGH Voltage
2000
VDD
mV
VIL
OE and FSEL Input LOW Voltage
GND − 300
800
mV
IIH
Input HIGH Current
OE
FSEL
−100
−100
+100
+100
mA
IIL
Input LOW Current
OE
FSEL
−100
−100
+100
+100
mA
VOH
Output HIGH Voltage
VDD = 3.3 V
VDD−1195
2105
VDD−945
2355
mV
VOL
Output LOW Voltage
VDD = 3.3 V
VDD−1945
1355
VDD−1600
1700
mV
VOUTPP
Output Voltage Amplitude
660
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50 ohm to VDD−2 V. See Figure 5.
Table 7. AC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 3)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
fCLKOUT
Output Clock Frequency
FSEL = HIGH
125
MHz
FSEL = LOW
250
Df
Frequency Stability −
NBXDBA019/NBXSBA019/NBXHBA019
(Note 4)
±50
ppm
FNOISE
Phase−Noise Performance
100 Hz of Carrier
−112/−105
dBc/Hz
fCLKout = 125 MHz/250 MHz
(See Figures 3 and 4)
1 kHz of Carrier
−123/−116
dBc/Hz
10 kHz of Carrier
−131/−124
dBc/Hz
100 kHz of Carrier
−131/−124
dBc/Hz
1 MHz of Carrier
−139/−133
dBc/Hz
10 MHz of Carrier
−161/−158
dBc/Hz
tjit(F)
RMS Phase Jitter
12 kHz to 20 MHz
0.4
0.9
ps
tjitter
Cycle to Cycle, RMS
1000 Cycles
1
8
ps
Cycle to Cycle, Peak−to−Peak
1000 Cycles
7
30
ps
Period, RMS
10,000 Cycles
0.6
4
ps
Period, Peak−to−Peak
10,000 Cycles
5
20
ps
tOE/OD
Output Enable/Disable Time
200
ns
tDUTY_CYCLE
Output Clock Duty Cycle
(Measured at Cross Point)
48
50
52
%
tR
Output Rise Time (20% and 80%)
250
400
ps
tF
Output Fall Time (80% and 20%)
250
400
ps
tstart
Start−up Time
1
5
ms
Aging
1st Year
3
ppm
Every Year After 1st
1
ppm
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 50 ohm to VDD−2 V. See Figure 5.
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.


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