Datenblatt-Suchmaschine für elektronische Bauteile |
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RYC002N05T316 Datenblatt(PDF) 1 Page - ZP Semiconductor |
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RYC002N05T316 Datenblatt(HTML) 1 Page - ZP Semiconductor |
1 / 2 page 0.9V Drive Nch MOSFET RYC002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(SST3). 3)Ultra low voltage drive(0.9V drive). Application Switching Packaging specifications Inner circuit Package Taping Code T316 Basic ordering unit (pieces) 3000 RYC002N05 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Drain-source voltage VDSS 50 V Gate-source voltage VGSS 8V Continuous ID 200 mA Pulsed IDP 800 mA Continuous IS 150 mA Pulsed ISP 800 mA Power dissipation PD 200 mW Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw 10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Symbol Limits Unit Channel to Ambient Rth (ch-a) 625 C / W * Each terminal mounted on a recommended land. Parameter Type Source current (Body Diode) Drain current Parameter *2 *1 *1 * Abbreviated symbol : QJ (1) Source (2) Gate (3) Drain ∗ 1 BODY DIODE ∗ 2 ESD PROTECTION DIODE SST3 <SOT-23> ∗2 ∗1 (3) (1) (2) 1 of 2 sales@zpsemi.com www.zpsemi.com |
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Ähnliche Beschreibung - RYC002N05T316 |
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