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N01S830HAT22ET Datenblatt(PDF) 9 Page - ON Semiconductor

Teilenummer N01S830HAT22ET
Bauteilbeschribung  1 Mb Ultra-Low Power Serial SRAM
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

N01S830HAT22ET Datenblatt(HTML) 9 Page - ON Semiconductor

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N01S830HA, N01S830BA
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Table 5. MODE REGISTER
Bit
Function
0
Hold Function
1 = Hold function disabled
0 = Hold function enabled (Default)
1
Reserved
2
Reserved
3
Reserved
4
Reserved
5
Reserved
6
Operating Mode
Bit 7
Bit 6
0
0 = Word Mode
1
0 = Page Mode
0
1 = Burst Mode (Default)
1
1 = Reserved
7
Power-Up State
The serial SRAM enters a know state at power-up time.
The device is in low-power standby state with CS = 1. A low
level on CS is required to enter a active state.
Battery Back-Up Operation
The Battery Back-Up function is available on the BBU
version of the serial SRAM. This version of the SRAM
cannot operate in the QUAD mode since the SIO3 input is
used for the VBAT connection. A standard coin cell battery
should be connected to the VBAT pin. On chip circuitry
monitors the VCC pin and when it is determined that the main
VCC power supply is turning off, the device automatically
switches the memory array to VBAT power input. When in
battery back-up mode and 3.0 to 3.4 V power supplied to the
VBAT input, memory data is retained in the SRAM array
and all existing interface and operating mode information is
retained.
Figure 15. Battery Back-Up Version Schematics
SO
NC
VSS
VCC
SCK
SI
Coin Cell Battery
3.0 to 3.4 V
VBAT
Serial
SRAM
CS
Table 6. ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Rating
Units
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC + 0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 5.5
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
−40
°C to 125°C
°C
Ambient Temperature Under Bias
TA
−40
°C to +125°C
°C
Soldering Temperature and Time
TSOLDER
260
°C, 10 sec
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 7. OPERATING CHARACTERISTICS (Industrial (I): TA= −40°C to +85°C, Automotive (E): TA = −40°C to +125°C)
Item
Symbol
Test Conditions
Min
Typ (Note 1)
Max
Units
Supply Voltage
VCC
2.5
5.5
V
Data Retention Voltage
VDR
1.0
V
Input High Voltage
VIH
0.7 VCC
VCC + 0.3
V
Input Low Voltage
VIL
−0.3
0.1 VCC
V
Output High Voltage
VOH
IOH = −0.4 mA
VCC − 0.2
V
Output Low Voltage
VOL
IOL = 1 mA
0.2
V
Input Leakage Current
ILI
CS = VCC, VIN = 0 to VCC
1.0
mA
Output Leakage Current
ILO
CS = VCC, VOUT = 0 to VCC
1.0
mA
Operating Current
ICC
f = 20 MHz, IOUT = 0, SPI / DUAL
10
mA
f = 20 MHz, IOUT = 0, QUAD
20
Standby Current
ISB
CS = VCC, VIN = VSS or VCC, I−Temp
4
10
mA
CS = VCC, VIN = VSS or VCC, E−Temp
20
1. Typical values are measured at VCC = VCC Typ., TA = 25°C and are not 100% tested.


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