Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

STPSC20065DY Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STPSC20065DY
Bauteilbeschribung  Automotive 650 V power Schottky silicon carbide diode
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC20065DY Datenblatt(HTML) 2 Page - STMicroelectronics

  STPSC20065DY Datasheet HTML 1Page - STMicroelectronics STPSC20065DY Datasheet HTML 2Page - STMicroelectronics STPSC20065DY Datasheet HTML 3Page - STMicroelectronics STPSC20065DY Datasheet HTML 4Page - STMicroelectronics STPSC20065DY Datasheet HTML 5Page - STMicroelectronics STPSC20065DY Datasheet HTML 6Page - STMicroelectronics STPSC20065DY Datasheet HTML 7Page - STMicroelectronics STPSC20065DY Datasheet HTML 8Page - STMicroelectronics STPSC20065DY Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 11 page
background image
Characteristics
STPSC20065-Y
2/11
DocID029260 Rev 1
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)
650
V
IF(RMS)
Forward rms current
40
A
IF(AV)
Average forward current
Tc = 140 °C, DC current
20
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 25 °C
90
A
tp = 10 ms sinusoidal, Tc = 125 °C
70
tp = 10 µs square, Tc = 25 °C
400
IFRM
Repetitive peak forward
current
Tc = 140 °C, Tj
= 175 °C, δ = 0.1
87
A
Tstg
Storage temperature range
-55 to +175
°C
Tj
Operating junction temperature(1)
-40 to +175
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Value
Unit
Typ.
Max.
Rth(j-c)
Junction to case
0.60
0.90
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
30
300
µA
Tj = 150 °C
-
280
2000
Tj = 25 °C
VR = 600 V
-
15
150
VF(2)
Forward voltage drop
Tj = 25 °C
IF = 20 A
-
1.30
1.45
V
Tj = 150 °C
-
1.45
1.65
Tj = 175 °C
-
1.5
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.02 x IF(AV) + 0.039 x IF2(RMS)


Ähnliche Teilenummer - STPSC20065DY

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
STMicroelectronics
STPSC20065D STMICROELECTRONICS-STPSC20065D Datasheet
631Kb / 13P
   650 V power Schottky silicon carbide diode
July 2017 Rev 2
STPSC20065DI STMICROELECTRONICS-STPSC20065DI Datasheet
631Kb / 13P
   650 V power Schottky silicon carbide diode
July 2017 Rev 2
More results

Ähnliche Beschreibung - STPSC20065DY

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
STMicroelectronics
STPSC10065-Y STMICROELECTRONICS-STPSC10065-Y Datasheet
542Kb / 12P
   Automotive 650 V power Schottky silicon carbide diode
November 2017 Rev 3
STPSC40065C-Y STMICROELECTRONICS-STPSC40065C-Y Datasheet
440Kb / 9P
   Automotive 650 V power Schottky silicon carbide diode
May 2016 Rev 2
STPSC6H065BY-TR STMICROELECTRONICS-STPSC6H065BY-TR Datasheet
234Kb / 9P
   Automotive 650 V power Schottky silicon carbide diode
Rev 1 - March 2018
STPSC10H065BY-TR STMICROELECTRONICS-STPSC10H065BY-TR Datasheet
236Kb / 9P
   Automotive 650 V power Schottky silicon carbide diode
Rev 1 - March 2018
STPSC6C065-Y STMICROELECTRONICS-STPSC6C065-Y Datasheet
182Kb / 9P
   Automotive 650 V power Schottky silicon carbide diode
December 2016 Rev 2
STPSC10H065-Y STMICROELECTRONICS-STPSC10H065-Y Datasheet
560Kb / 11P
   Automotive 650 V power Schottky silicon carbide diode
February 2017 Rev 4
STPSC10C065-Y STMICROELECTRONICS-STPSC10C065-Y Datasheet
223Kb / 9P
   Automotive 650 V power Schottky silicon carbide diode
Rev 2 - September 2018
STPSC8065-Y STMICROELECTRONICS-STPSC8065-Y Datasheet
506Kb / 9P
   Automotive 650 V power Schottky silicon carbide diode
July 2017 Rev 2
STPSC6H065 STMICROELECTRONICS-STPSC6H065 Datasheet
218Kb / 14P
   650 V power Schottky silicon carbide diode
STPSC20H065CW STMICROELECTRONICS-STPSC20H065CW Datasheet
111Kb / 8P
   650 V power Schottky silicon carbide diode
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com