Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1047E Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1047E Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1047E ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; RBE= ∞ 140 V V(BR)CBO Collector-Base Breakdown Voltage IC=5mA; IE= 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 0.6 2.5 V VBE(on) Base -Emitter On Voltage IC= 1A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V ; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 4V; IC= 0 100 μ A hFE-1 DC Current Gain IC= 1A ; VCE= 5V 100 200 hFE-2 DC Current Gain IC= 6A ; VCE= 5V 20 COB Output Capacitance IE= 0;VCB= 10V;ftest= 1.0MHz 210 pF fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V 15 MHz Switching times ton Turn-on Time IC= 1A ,RL= 20Ω, IB1= IB2= 0.1A,VCC= 20V 0.26 μ s tstg Storage Time 6.88 μ s tf Fall Time 0.68 μ s |
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Ähnliche Beschreibung - 2SD1047E |
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