Datenblatt-Suchmaschine für elektronische Bauteile |
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CD-DF406S Datenblatt(PDF) 1 Page - Bourns Electronic Solutions |
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CD-DF406S Datenblatt(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page Features n RoHScompliant* n Lowpowerlossandhighefficiency n Highcurrentcapability n Lowprofilepackage Applications n ACoperatedproducts n Computermonitors n Set-topboxes n Cablemodems CD-DF4xxS(L)SeriesSurfaceMountBridgeRectifierDiode *RoHSDirective2002/95/ECJan.27,2003includingannexandRoHSRecast2011/65/EUJune8,2011. Specificationsaresubjecttochangewithoutnotice. Thedevicecharacteristicsandparametersinthisdatasheetcananddovaryindifferentapplicationsandactualdeviceperformancemayvaryovertime. Usersshouldverifyactualdeviceperformanceintheirspecificapplications. Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CD- Unit DF406S DF408S DF410S DF406SL DF408SL DF410SL Maximum Repetitive Peak Reverse Voltage VRRM 600 800 1000 600 800 1000 V Maximum Average Forward Rectified Current (TA = 55 °C) IF(AV) 4.0 A Peak Forward Surge Current 8.3 ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 150.0 A Operating Temperature Range TJ -55 to +175 °C Storage Temperature Range TSTG -55 to +175 °C General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Bridge Rectifier Diodes for rectification applications in compact chip package 0.41 ˝ x 0.32 ˝ size format, which offers PCB real estate savings and are considerably smaller than standard parts. The Bridge Rectifier Diodes offer a forward current of 4 A with a choice of repetitive peak reverse voltages between 600 V and 1000 V. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CD-DF4xxS(L) Unit Test Conditions Min. Typ. Max. Instantaneous Forward Voltage VF IF = 2 A CD-DF4xxS 0.92 0.95 V CD-DF4xxSL 0.86 0.90 Repetitive Peak Reverse Current IRRM VR = VRRM TA = +25 °C 0.08 5.0 µA Junction Capacitance CJ VR = 4 V, f = 1.0 MHz CD-DF4xxS 45 pF CD-DF4xxSL 45 Thermal Resistance, Junction to Air (1) RΘJA CD-DF4xxS 35 °C / W CD-DF4xxSL 35 Thermal Resistance, Junction to Lead (1) RΘJL CD-DF4xxS 15 °C / W CD-DF4xxSL 15 NOTE 1: Thermal resistance, junction to ambient, measured on PC board with 50 mm2 (0.03 mm thick) land areas. 4 – 1 + 3 ~ 2 ~ |
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Ähnliche Beschreibung - CD-DF406S |
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