Datenblatt-Suchmaschine für elektronische Bauteile |
|
ST_STP9NK90Z Datenblatt(PDF) 3 Page - STMicroelectronics |
|
ST_STP9NK90Z Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 11 page 3/11 STP9NK90Z - STF9NK90Z - STW9NK90Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1mA, VGS = 0 900 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 100µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 3.6 A 1.1 1.3 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15V, ID = 3.6 A 5.75 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V,f= 1MHz,VGS = 0 2115 190 40 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS =0V, VDS = 0V to 720V 115 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =450 V, ID =4A RG = 4.7Ω VGS =10 V (Resistive Load see, Figure 3) 22 13 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =720V, ID =8 A, VGS =10V 72 14 38 100 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 450 V, ID =4 A RG =4.7Ω VGS =10 V (Resistive Load see, Figure 3) 55 28 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 720V, ID =8 A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 53 11 22 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 8 32 A A VSD (1) Forward On Voltage ISD = 8 A, VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8 A, di/dt = 100A/µs VDD =50V, Tj = 150°C (see test circuit, Figure 5) 950 10 21 ns µC A |
Ähnliche Teilenummer - ST_STP9NK90Z |
|
Ähnliche Beschreibung - ST_STP9NK90Z |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |