February 2004

©2004 Fairchild Semiconductor Corporation

FDD6685 Rev D (W)

FDD6685

30V P-Channel PowerTrench

General Description

This P-Channel MOSFET is a rugged gate version of

Fairchild

Semiconductor’s

advanced

PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gave drive

voltage ratings (4.5V – 25V).

Features

• –40 A, –30 V. R

Ω @ V

Ω @ V

• Fast switching speed

• High performance trench technology for extremely

• High power and current handling capability

• Qualified to AEC Q101

G

S

D

TO-252

S

G

D

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

V

Gate-Source Voltage

±25

V

(Note 3)

(Note 1a)

Pulsed, PW

A

Power Dissipation for Single Operation

(Note 1)

52

(Note 1a)

3.8

(Note 1b)

1.6

W

Operating and Storage Junction Temperature Range

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

2.9

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1a)

40

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1b)

96

°C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.

For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.