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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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WFF10N65 Datenblatt(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFF10N65 Datenblatt(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 8 page  www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 2/8 WFF10N65 Product Description Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Electrical Characteristics(Tc=25℃) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V Drain cut -off current IDSS VDS=650V,VGS=0V - - 1 µA VDS=520V,Tc=125℃ 10 µA Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 650 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA, referenced to 25℃ 0.68 V/℃ Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 3 - 4.5 V Drain -source ON resistance RDS(ON) VGS=10V,ID=5A - 0.84 0.95 Ω Forward Transconductance gfs VDS=40V,ID=5A - 8.2 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 1610 2065 pF Reverse transfer capacitance Crss - 20 26 Output capacitance Coss - 156 210 Switching time Turn-On rise time tr VDD=300V, ID=10A， RG=25Ω， (Note4,5) - 109 148 ns Turn-On delay time td(on) - 68 90 Turn-Off Fall time tf - 85 165 Turn-Off delay time td(off) - 213 300 Total gate charge(gate-source plus gate-drain) Qg VDD=480V, VGS=10V, ID=10A (Note4,5) - 34 45 nC Gate-source charge Qgs - 6.9 - Gate-drain("miller") Charge Qgd - 13 - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 10 A Pulse drain reverse current IDRP - - - 40 A Forward voltage(diode) VDSF IDR=10A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=10A,VGS=0V, dIDR / dt =100 A / µs - 425 - ns Reverse recovery charge Qrr - 4.3 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=14.5mH IAS=10A,VDD=50V, RG=25Ω ,Starting TJ=25℃ 3.ISD≤10A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
Ähnliche Teilenummer - WFF10N65_14 |
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Ähnliche Beschreibung - WFF10N65_14 |
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