Datenblatt-Suchmaschine für elektronische Bauteile |
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WFF4N65S Datenblatt(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFF4N65S Datenblatt(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
2 / 7 page www.winsemi.com Tel : 0755-82506288 Fax : 0755-82506299 2/7 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WFF4N65S Product Description 650V 650V 650V 650V Super-Junction Super-Junction Super-Junction Super-Junction Power Power Power Power MOSFET MOSFET MOSFET MOSFET Electrical Characteristics(Tc=25℃ unless otherwise noted) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA Drain cut -off current IDSS VDS=650,VGS=0V, Tj=25℃ Tj=125℃ - - - 10 1 - µ A Drain -source breakdow n voltage V(BR)DSS ID=250µA,VGS=0V 650 - - V Gate threshold voltage VGS(th) VDS=VGS,ID=250uA 2.5 3.5 4.5 V Drain -source ON resistance RDS(ON) VGS=10V,ID=2A Tj=25℃ Tj=150℃ - - 0.83 1.9 0.93 - Ω Gate resistance RG f=1MHz,open drain - 0.4 - Ω Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 450 pF Reverse transfer capacitance Crss - 5 Output capacitance Coss - 300 Turn-on delay time td(on) V DD = 300V, I D = 2A RG = 12Ω, VGS=10V - 13 - ns Rise time tr - 12 - Turn-off delay time td(off) - 31 - Fall time tf - 9 - Gate to source charge Qgs VDD=480V,ID=2A, VGS=0 to 10 V - 3 - nC Gate to drain charge Q gd - 6 - Gate charge total Qg - 13 - Gate plateau voltage Vplateau - 5. 8 - V Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Diode forward voltage VSD VGS=0 V, IF=2A - - 1.2 V Reverse recovery time trr VR=50 V, IF=4A, dIF/dt=100 A/μs - 220 - ns Reverse recovery charge Qrr - 1.6 - µc Peak reverse recovery current Irrm - 12 - A |
Ähnliche Teilenummer - WFF4N65S |
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Ähnliche Beschreibung - WFF4N65S |
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