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WFF4N65S Datenblatt(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Teilenummer WFF4N65S
Bauteilbeschribung  650V Super-Junction Power MOSFET
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Hersteller  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WFF4N65S Datenblatt(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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Tel : 0755-82506288
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WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WFF4N65S Product Description
650V
650V
650V
650V Super-Junction
Super-Junction
Super-Junction
Super-Junction Power
Power
Power
Power MOSFET
MOSFET
MOSFET
MOSFET
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
Drain cut -off current
IDSS
VDS=650,VGS=0V,
Tj=25℃
Tj=125℃
-
-
-
10
1
-
µ A
Drain -source breakdow n voltage
V(BR)DSS
ID=250µA,VGS=0V
650
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250uA
2.5
3.5
4.5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=2A
Tj=25℃
Tj=150℃
-
-
0.83
1.9
0.93
-
Gate resistance
RG
f=1MHz,open drain
-
0.4
-
Input capacitance
Ciss
VDS=25V,
VGS=0V,
f=1MHz
-
450
pF
Reverse transfer capacitance
Crss
-
5
Output capacitance
Coss
-
300
Turn-on delay time
td(on)
V
DD = 300V, I D = 2A
RG = 12Ω, VGS=10V
-
13
-
ns
Rise time
tr
-
12
-
Turn-off delay time
td(off)
-
31
-
Fall time
tf
-
9
-
Gate to source charge
Qgs
VDD=480V,ID=2A,
VGS=0 to 10 V
-
3
-
nC
Gate to drain charge
Q gd
-
6
-
Gate charge total
Qg
-
13
-
Gate plateau voltage
Vplateau
-
5. 8
-
V
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Diode forward voltage
VSD
VGS=0 V, IF=2A
-
-
1.2
V
Reverse recovery time
trr
VR=50 V, IF=4A,
dIF/dt=100 A/μs
-
220
-
ns
Reverse recovery charge
Qrr
-
1.6
-
µc
Peak reverse recovery current
Irrm
-
12
-
A


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