Datenblatt-Suchmaschine für elektronische Bauteile |
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WDW80DK40B Datenblatt(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WDW80DK40B Datenblatt(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
1 / 6 page Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WDW80DK40B Product Description 80 80 80 80A, A, A, A,4 4 4 400 00 00 00V V V V Ultrafast Ultrafast Ultrafast Ultrafast Dual Dual Dual Dual Diode Diode Diode Diode WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WT-D004-Rev.A1 Jan.2014 1010 Features � Ultrafast recovery time � Soft Recovery characteristics � Low Recovery Loss � Low forward voltage � High reliability by planer design � Low leakage current General Description FRD from Winsemi utilizes advanced processing techniques to achieve ultrafast recovery times and higher forward current. Its soft recovery characteristics and high reliability suit for wide industrial applications. Applications � Freewheeling, Snubber, Clamp � Inversion Welder � PFC � Plating Power Supply � Ultrasonic Cleaner and Welder � Converter & Chopper � UPS Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VR Maximum D.C.Reverse Voltage 400 V VRRM MaximumRepetitive Revers Voltage 400 V IF(AV) Average Forward Current Tc=110℃,Per Diode 40 A Tc=110℃,Per Package 80 A IF(RMS) RMS Forward Current Tc=110℃,Per Diode 56 A IFSM No-Repetitive Peak Surge current TJ=45℃,t=10ms,50Hz,Sine 400 A PD Power Dissipation 156 W TJ Junction Temperature 150 ℃ TSTG Storage Temperature Range -40~150 ℃ Torque Module-to-Sink Recommended 1.1 N.m RθJC Thermal Resistance Junction-to-Case 0.8 ℃/W Weight 6.0 g A A A A2 2 2 2 A1 A1 A1 A1 C C C C |
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