MJ3281A MJ1302A

4

Motorola Bipolar Power Transistor Device Data

PNP MJ1302A

Figure 7. Typical Base–Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

10

1.8

1.4

1

TJ = 25°C

NPN MJ3281A

Figure 8. Typical Base–Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

3.2

0

PNP MJ1302A

Figure 9. Typical Output Characteristics

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0

NPN MJ3281A

Figure 10. Typical Output Characteristics

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

20

12

0

Figure 11. Forward Bias Safe Operating Area (FBSOA)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

100

10

0.1

100

10

1

1000

1 s

250 ms

1.6

1.2

11

12

13

14

15

16

17

18

19

20

0

2

4

6

8

10

12

14

16

18

20

TJ = 25°C

20

12

0

16

8

4

1

2

3

4

5

6

7

8

9

10

0

1

2

3

4

5

6

7

8

9

10

16

8

4

1

TJ = 25°C

TJ = 25°C

IB = 1 A

0.2 A

IB = 1 A

0.8 A

0.6 A

0.2 A

2.8

2.4

2

1.6

1.2

0.8

0.4

0.8 A

There are two limitations on the power handling ability of a

transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable op-

eration; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 11 is based on TJ(pk) = 200°C; TC is

variable depending on conditions. At high case tempera-

tures, thermal limitations will reduce the power than can be

handled to values less than the limitations imposed by se-

cond breakdown.

0.4 A

0.6 A

0.4 A

TYPICAL CHARACTERISTICS