MJ3281A MJ1302A

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

VCEO(sus)

200

—

—

Vdc

Emitter–Base Voltage

(IE = 100 µAdc, IC = 0)

VEBO

7

—

—

Vdc

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0)

ICBO

—

—

50

µAdc

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

IEBO

—

—

5

µAdc

Emitter Cutoff Current

(VEB = 7 Vdc, IC = 0)

IEBO

—

—

25

µAdc

SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non–repetitive)

(VCE = 100 Vdc, t = 1 s (non–repetitive)

IS/b

4

1

—

—

—

—

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5 Vdc)

(IC = 1 Adc, VCE = 5 Vdc)

(IC = 3 Adc, VCE = 5 Vdc)

(IC = 5 Adc, VCE = 5 Vdc)

(IC = 7 Adc, VCE = 5 Vdc)

(IC = 8 Adc, VCE = 5 Vdc)

(IC = 15 Adc, VCE = 5 Vdc)

hFE

60

60

60

60

60

45

12

125

—

—

—

115

—

35

175

175

175

175

175

—

—

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 1 Adc)

VCE(sat)

—

—

3

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)

fT

—

30

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob

—

—

600

pF

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤ 2%.