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VS-30BQ100HM3 Datenblatt(PDF) 4 Page - Vishay Siliconix

Teilenummer VS-30BQ100HM3
Bauteilbeschribung  Small foot print, surface mountable
Download  7 Pages
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VS-30BQ100HM3 Datenblatt(HTML) 4 Page - Vishay Siliconix

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VS-30BQ100HM3
www.vishay.com
Vishay Semiconductors
Revision: 17-Dec-14
4
Document Number: 94832
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); 
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
100
120
140
160
180
IF(AV) - Average Forward Current (A)
345
0
DC
See note (1)
Square wave (D = 0.50)
80% rated V
r applied
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
12
0
1.0
0.5
1.5
2.0
2.5
IF(AV) - Average Forward Current (A)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
DC
RMS limit
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
10
100
1000
tp - Square Wave Pulse Duration (µs)
100
1000
10 000
10
At any rated load condition
and with rated V
RRM applied
following surge


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