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VS-30EPH06HN3 Datenblatt(PDF) 5 Page - Vishay Siliconix |
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VS-30EPH06HN3 Datenblatt(HTML) 5 Page - Vishay Siliconix |
5 / 7 page VS-30EPH06HN3 www.vishay.com Vishay Semiconductors Revision: 10-Jul-15 5 Document Number: 94371 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions IRFP250 D.U.T. L = 70 μH V R = 200 V 0.01 Ω G D S dI F/dt adjust Q rr 0.5 I RRM dI (rec)M/dt 0.75 I RRM I RRM t rr t b t a I F dI F/dt 0 (1) (2) (3) (4) (5) (1) dI F/dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 IRRM extrapolated to zero current. (4) Q rr - area under curve defined by trr and I RRM t rr x IRRM 2 Q rr = (5) dI (rec)M/dt - peak rate of change of current during t b portion of trr |
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