VS-MBR16...PbF Series, VS-MBR16...-N3 Series

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Vishay Semiconductors

Revision: 29-Aug-11

1

Document Number: 94286

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Schottky Rectifier, 16 A

FEATURES

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation

for

enhanced

mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

DESCRIPTION

The VS-MBR16... Schottky rectifier has been optimized for

low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 150 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

PRODUCT SUMMARY

Package

TO-220AC

16 A

35 V, 45 V

0.57 V

40 mA at 125 °C

150 °C

Diode variation

Single die

24 mJ

Anode

1

3

Cathode

Base

cathode

2

TO-220AC

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

16

A

35/45

V

1800

A

0.57

V

Range

- 65 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-MBR1635PbF

VS-MBR1635-N3

VS-MBR1645PbF

VS-MBR1645-N3

UNITS

Maximum DC reverse

voltage

35

35

45

45

V

Maximum working peak

reverse voltage

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

16

A

Non-repetitive peak surge current

5 µs sine or 3 µs rect. pulse

Following any rated load

condition and with rated

1800

A

Surge applied at rated load condition half wave

single phase, 60 Hz

150

Non-repetitive avalanche energy

24

mJ

Repetitive avalanche current

Current decaying linearly to zero in 1 μs

3.6

A