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M41T315V-85MH6E Datenblatt(PDF) 10 Page - STMicroelectronics |
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M41T315V-85MH6E Datenblatt(HTML) 10 Page - STMicroelectronics |
10 / 24 page M41T315Y*, M41T315V, M41T315W 10/24 Table 4. AC Electrical Characteristics (M41T315V/W) Note: 1. Valid for Ambient Operating Temperature: TA = –40 to 85°C; VCC = 2.7 to 3.6V (except where noted). 2. tWR is a function of the latter occurring edge of WE or CEI. 3. tDH and tDS are functions of the first occurring edge of WE or CEI in RAM mode. Symbol Parameter(1) Min Typ Max Units tAVAV tRC READ Cycle Time 85 ns tELQV tCO CEI Access Time 85 ns tGLQV tOE OE Access Time 85 ns tELQX tCOE CEI to Output Low Z 5 ns tGLQX tOEE OE to Output Low Z 5 ns tEHQZ tOD CEI to Output High Z 30 ns tGHQZ tODO OE to Output High Z 30 ns tRR READ Recovery 20 ns tELEH tCW CEI Pulse Width 65 ns tGLGH tOW OE Pulse Width 60 ns tAVAV tWC WRITE Cycle 85 ns tWLWH tWP WRITE Pulse Width 60 ns tEHAX tWHAX tWR (2) WRITE Recovery 25 ns tDVEH tDVWH tDS (3) Data Setup 35 ns tEHDX tWHDX tDH (3) Data Hold Time 5 ns tRST RST Pulse Width 85 ns |
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