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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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MMBT589 Datenblatt(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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MMBT589 Datenblatt(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 4 page  Production specification PNP General Purpose Transistor MMBT589 C118 www.gmicroelec.com Rev.B 1 FEATURES Epitaxial planar die construction. Also available in lead free version. APPLICATIONS High current surface mount PNP silicon switching transistor for load management in portable appilications. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT589 589 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage -50 V VCEO collector-emitter voltage -30 V VEBO emitter-base voltage -5 V IC collector current (DC) -1.0 A ICM Collector Current-Peak -2.0 A PC Collector dissipation 0.31 W RθJA Thermal Resistance, Junction to Ambient 403 °C/W Tj ,Tstg junction and storage temperature -55 to +150 °C Pb Lead-free |
Ähnliche Teilenummer - MMBT589_13 |
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Ähnliche Beschreibung - MMBT589_13 |
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