Datenblatt-Suchmaschine für elektronische Bauteile |
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SM16G45A Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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SM16G45A Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page SM16G45,SM16J45,SM16G45A,SM16J45A 2001-07-10 1 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16G45,SM16J45,SM16G45A,SM16J45A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current : IT (RMS) = 16A l High Commutating (dv / dt) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM16G45 SM16G45A 400 Repetitive Peak Off−State Voltage SM16J45 SM16J45A VDRM 600 V R.M.S On−State Current (Full Sine Waveform Tc = 100°C) IT (RMS) 16 A 150 (50Hz) Peak One Cycle Surge On−State Current (Non−Repetitive) ITSM 165 (60Hz) A I 2 t Limit Value I 2 t 112.5 A 2 s Peak Gate Power Dissipation PGM 5 W Average Gate Power Dissipation PG (AV) 0.5 W Peak Gate Voltage VGM 10 V Peak Gate Current IGM 2 A Junction Temperature Tj −40~125 °C Storage Temperature Range Tstg −40~125 °C Unit: mm JEDEC TO−220AB JEITA ― TOSHIBA 13−10G1A Weight: 2.0g |
Ähnliche Teilenummer - SM16G45A |
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Ähnliche Beschreibung - SM16G45A |
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