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FDC6020C Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDC6020C Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page November 2003 2003 Fairchild Semiconductor Corporation FDC6020C Rev B(W) FDC6020C Complementary PowerTrench MOSFET General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • DC/DC converter • Load switch • Motor Driving Features • Q1 –4.2 A, –20V. RDS(ON) = 55 mΩ @ VGS = – 4.5 V RDS(ON) = 82 mΩ @ VGS = – 2.5 V • Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON). • FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size 3 2 1 4 5 6 Bottom Drain Contact Bottom Drain Contact Q2 (N) Q1 (P) 3 2 1 4 5 6 Bottom Drain Contact Bottom Drain Contact Q2 (N) Q1 (P) Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage –20 20 V VGSS Gate-Source Voltage ±12 ±12 V ID Drain Current - Continuous (Note 1a) –4.2 5.9 A - Pulsed –20 20 PD Power Dissipation for Dual Operation (Note 1a) 1.6 W Power Dissipation for single Operation (Note 1a) 1.8 (Note 1b) 1.2 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 68 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1a) 1 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .020 FDC6020C 7’’ 8mm 3000 units |
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Ähnliche Beschreibung - FDC6020C |
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