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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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S5D9 Datenblatt(PDF) 88 Page - Renesas Technology Corp |
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S5D9 Datenblatt(HTML) 88 Page - Renesas Technology Corp |
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88 / 115 page  R01DS0303EU0100 Rev.1.00 Page 88 of 115 Nov 3, 2016 S5D9 2. Electrical Characteristics Figure 2.85 USBHS_DP and USBHS_DM output timing in high-speed mode Figure 2.86 Test circuit in high-speed mode 2.4.2 USBFS Timing Table 2.37 USBHS high-speed characteristics (USBHS_DP and USBHS_DM pin characteristics) Conditions: USBHS_RREF = 2.2 kΩ ± 1%, USBMCLK = 12/20/24 MHz Item Symbol Min Max Unit Test conditions Battery Charging Specification D+ sink current IDP_SINK 25 175 μA- D– sink current IDM_SINK 25 175 μA- DCD source current IDP_SRC 713 μA- Data detection voltage VDAT_REF 0.25 0.4 V - D+ source voltage VDP_SRC 0.5 0.7 V Output current = 250 μA D– source voltage VDM_SRC 0.5 0.7 V Output current = 250 μA Table 2.38 USBFS low-speed characteristics for host only (USB_DP and USB_DM pin characteristics) (1 of 2) Conditions: VCC = AVCC0 = VCC_USB = VBATT = 3.0 to 3.6V, 2.7 ≤ VREFH0/VREFH ≤ AVCC0, VCC_USBHS = AVCC_USBHS = 3.0 to 3.6 V, UCLK = 48 MHz Item Symbol Min Typ Max Unit Test conditions Input characteristics Input high voltage VIH 2.0 - - V - Input low voltage VIL -- 0.8 V - Differential input sensitivity VDI 0.2 - - V | USB_DP - USB_DM | Differential common-mode range VCM 0.8 - 2.5 V - Output characteristics Output high voltage VOH 2.8 - 3.6 V IOH = –200 μA Output low voltage VOL 0.0 - 0.3 V IOL= 2 mA Cross-over voltage VCRS 1.3 - 2.0 V Figure 2.87 Rise time tLR 75 - 300 ns Fall time tLF 75 - 300 ns Rise/fall time ratio tLR / tLF 80 - 125 % tLR/ tLF USBHS_DP, USBHS_DM tHSF tHSR 90% 10% 10% 90% Observation point USBHS_DP USBHS_DM 45 45 |
Ähnliche Teilenummer - S5D9 |
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Ähnliche Beschreibung - S5D9 |
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