Datenblatt-Suchmaschine für elektronische Bauteile |
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74AHCT1G66GW Datenblatt(PDF) 6 Page - NXP Semiconductors |
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74AHCT1G66GW Datenblatt(HTML) 6 Page - NXP Semiconductors |
6 / 24 page 2002 Jun 06 6 Philips Semiconductors Product specification Bilateral switch 74AHC1G66; 74AHCT1G66 DC CHARACTERISTICS Type 74AHC1G66 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). SYMBOL PARAMETER TEST CONDITIONS Tamb (°C) UNIT OTHER VCC (V) 25 −40 to +85 −40 to +125 MIN. TYP. MAX. MIN. MAX. MIN. MAX. VIH HIGH-level input voltage 2.0 1.5 −− 1.5 − 1.5 − V 3.0 2.1 −− 2.1 − 2.1 − V 5.5 3.85 −− 3.85 − 3.85 − V VIL LOW-level input voltage 2.0 −− 0.5 − 0.5 − 0.5 V 3.0 −− 0.9 − 0.9 − 0.9 V 5.5 −− 1.65 − 1.65 − 1.65 V ILI input leakage current VI =VCC or GND 5.5 −− 0.1 − 1.0 − 2.0 µA IS analog switch current, OFF-state VI =VIH or VIL; |VS| =VCC − GND; see Fig.5 5.5 −− 0.1 − 1.0 − 4.0 µA analog switch current, ON-state VI =VIH or VIL; |VS| =VCC − GND; see Fig.6 5.5 −− 0.1 − 1.0 − 4.0 µA ICC quiescent supply current VI =VCC or GND; Vis = GND or VCC; Vos =VCC or GND 5.5 −− 1.0 − 10 − 40 µA CI input capacitance of enable input (E) − 210 − 10 − 10 pF CS maximum switch capacitance independent I/O − 410 − 10 − 10 pF |
Ähnliche Teilenummer - 74AHCT1G66GW |
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Ähnliche Beschreibung - 74AHCT1G66GW |
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