Datenblatt-Suchmaschine für elektronische Bauteile |
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74AHCT1G66GW Datenblatt(PDF) 2 Page - NXP Semiconductors |
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74AHCT1G66GW Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 24 page 2002 Jun 06 2 Philips Semiconductors Product specification Bilateral switch 74AHC1G66; 74AHCT1G66 FEATURES • Very low ON-resistance: –26 Ω (typical) at VCC = 3.0 V –16 Ω (typical) at VCC = 4.5 V –14 Ω (typical) at VCC = 5.5 V. • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. • High noise immunity • Low power dissipation • Balanced propagation delays • SOT353 and SOT753 package • Output capability: non standard • Specified from −40 to +125 °C. DESCRIPTION The 74AHC1G/AHCT1G66 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G66 provides an analog switch. The switch has two input/output pins (Y and Z) and an active HIGH enable input pin (E). When pin E is LOW, the analog switch is turned off. QUICK REFERENCE DATA Ground = 0 V; Tamb =25 °C; tr =tf ≤ 3ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi + ((CL +CS) × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS = maximum switch capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT AHC1G AHCT1G tPZH/tPZL turn-on time E to Vos CL = 15 pF; RL =1kΩ; VCC =5V 33ns tPHZ/tPLZ turn-off time E to Vos CL = 15 pF; RL =1kΩ; VCC =5V 55ns CI input capacitance 2 2 pF CPD power dissipation capacitance CL = 50 pF; f = 10 MHz; notes 1 and 2 13 15 pF CS switch capacitance 4 4 pF |
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