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74AHCT1G66GV Datenblatt(PDF) 5 Page - NXP Semiconductors

Teilenummer 74AHCT1G66GV
Bauteilbeschribung  Bilateral switch
Download  24 Pages
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AHCT1G66GV Datenblatt(HTML) 5 Page - NXP Semiconductors

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2002 Jun 06
5
Philips Semiconductors
Product specification
Bilateral switch
74AHC1G66; 74AHCT1G66
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
note 1.
Note
1. To avoid drawing VCC current out of pin Z, when switch current flows into pin Y, the voltage drop across the
bidirectional switch must not exceed 0.4 V. If the switch current flows into pin Z, no VCC current will flow out of pin Y.
In this case there is no limit for the voltage drop across the switch, but the voltage at pins Y and Z may not exceed
VCC or GND.
SYMBOL
PARAMETER
CONDITIONS
74AHC1G66
74AHCT1G66
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
VI
input voltage
0
5.5
0
5.5
V
VS
switch voltage
0
VCC
0
VCC
V
Tamb
operating ambient
temperature
see DC and AC
characteristics per
device
−40
+25
+125
−40
+25
+125
°C
tr,tf
input rise and fall times
VCC = 3.3 ±0.3 V
−−
100
−−−
ns/V
VCC = 5.0 ±0.5 V
−−
20
−−
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+7.0
V
IIK
input diode current
VI < −0.5 V or VI >VCC + 0.5 V
−−20
mA
ISK
switch diode current
VS < −0.5 V or VS >VCC + 0.5 V
−±20
mA
IS
switch source or sink current
−0.5V<VO <VCC + 0.5 V
−±25
mA
ICC, IGND
VCC or GND current
−±75
mA
Tstg
storage temperature
−65
+150
°C
PD
power dissipation per package
for temperature range from
−40 to +125 °C
250
mW


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