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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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SI4955DY Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI4955DY Datenblatt(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page  Si4955DY Vishay Siliconix New Product www.vishay.com 2 Document Number: 72241 S-32411—Rev. B, 24-Nov-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA Ch 1 −1.0 −3 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA Ch 2 −0.4 −1 V Gate Body Leakage IGSS VDS = 0 V, VGS = "20 V Ch 1 "100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V Ch 2 "100 nA VDS = −24 V, VGS = 0 V Ch 1 −1 Zero Gate Voltage Drain Current IDSS VDS = −16 V, VGS = 0 V Ch 2 −1 mA Zero Gate Voltage Drain Current IDSS VDS = −24 V, VGS = 0 V, TJ = 85_C Ch 1 −5 mA VDS = −16 V, VGS = 0 V, TJ = 85_C Ch 2 −5 On State Drain Currenta ID( ) VDS w −5 V, VGS = −10 V Ch 1 −20 A On-State Drain Currenta ID(on) VDS p −5 V, VGS = −10 V Ch 2 −20 A VGS = −10 V, ID = −5.0 A Ch 1 0.044 0.054 Drain Source On State Resistancea VGS = −4.5 V, ID = −7.0 A Ch 2 0.022 0.027 Drain-Source On-State Resistancea rDS(on) VGS = −4.5 V, ID = −3.7 A Ch 1 0.082 0.100 W DS(on) VGS = −2.5 V, ID = −6.2 A Ch 2 0.029 0.035 VGS = −1.8 V, ID = −3 A Ch 2 0.039 0.048 Forward Transconductancea gf VDS = −15 V, ID = −5.0 A Ch 1 10 S Forward Transconductancea gfs VDS = −15 V, ID = −3 A Ch 2 25 S Diode Forward Voltagea VSD IS = −1.7 A, VGS = 0 V Ch 1 −0.80 −1.2 V Diode Forward Voltagea VSD IS = −1.7 A, VGS = 0 V Ch 2 −0.80 −1.2 V Dynamicb Total Gate Charge Qg Ch 1 12.5 19 Total Gate Charge Qg Channel-1 Ch 2 21 25 Gate Source Charge Q Channel-1 VDS = −15 V, VGS = −10 V, ID = −5.0 A Ch 1 2.1 nC Gate-Source Charge Qgs Channel-2 V 10 V V 45 V I 7 A Ch 2 2.6 nC Gate Drain Charge Q d VDS = −10 V, VGS = −4.5 V, ID = −7 A Ch 1 3.5 Gate-Drain Charge Qgd Ch 2 6.0 Turn On Delay Time td( ) Ch 1 7 15 Turn-On Delay Time td(on) Ch 2 20 30 Rise Time t Channel-1 VDD = −15 V, RL = −15 W Ch 1 10 15 Rise Time tr VDD = −15 V, RL = −15 W ID ^ −1 A, VGEN = −10 V, RG = 6 W Ch 2 40 60 Turn Off Delay Time td( ff) Channel-2 V 10 V R 10 W Ch 1 30 45 ns Turn-Off Delay Time td(off) VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, RG = 6 W Ch 2 125 190 ns Fall Time tf ID ^ 1 A, VGEN = 4.5 V, RG = 6 W Ch 1 22 35 Fall Time tf Ch 2 85 130 Source-Drain t IF = −1.7 A, di/dt = 100 A/ms Ch 1 25 60 Source-Drain Reverse Recovery Time trr IF = −1.7 A, di/dt = 100 A/ms Ch 2 64 90 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. |
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