Datenblatt-Suchmaschine für elektronische Bauteile |
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PXT2907A Datenblatt(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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PXT2907A Datenblatt(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors PXT2907A TRANSISTOR (PNP) FEATURES Switching and Linear Amplification High Current and Low Voltage Complement to PXT2222A MARKING:p2F MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.01 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.01 µA VCE=-10V, IC=-0.1mA 75 VCE=-10V, IC=-1mA 100 VCE=-10V, IC=-10mA 100 VCE=-10V, IC=-150mA 100 300 DC current gain hFE VCE=-10V, IC=-500mA 50 IC=-500mA,IB=-50mA -1.6 V Collector-emitter saturation voltage VCE(sat) IC=-150mA,IB=-15mA -0.4 V IC=-500mA,IB=-50mA -2.6 V Base-emitter saturation voltage VBE(sat) IC=-150mA,IB=-15mA -1.3 V Delay time td 12 ns Rise time tr 30 ns Storage time ts 300 ns Fall time tf VCC=-30V, IC=-150mA, IB1=- IB2=-15mA 65 ns Transition frequency fT VCE=-10V,IC=-20mA, f=100MHz 200 MHz Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 500 mW RθJA Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 D,Nov,2015 |
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Ähnliche Beschreibung - PXT2907A |
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