Datenblatt-Suchmaschine für elektronische Bauteile |
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KS05H3 Datenblatt(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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KS05H3 Datenblatt(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
3 / 4 page Elektronische Bauelemente KS05H3 90W, 5V Integrated ESD Protection Array 13-Jan-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C,I/O to GND unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 3 VRWM - - 5 V 6 - 10 V IT=1mA Reverse Breakdown Voltage VBR 5 - 12 V IT=1mA, VCC to GND Reverse Leakage Current IR - - 1 µA VRWM=5V, I/O&VCC to GND Forward voltage VF 0.4 - 1.5 V IF=10mA, I/O&VCC to GND - - 13 V IPP=1A, I/O&VCC to GND Clamping Voltage 2 VC - - 25 V IPP=3.5A, I/O&VCC to GND - - 0.8 pF VR=0V, f=1MHz Junction Capacitance CJ - - 0.4 pF VR=0V, f=1MHz, I/O to I/O Notes : 1. Device stressed with ten non-repetitive ESD pulses. 2. Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5. 3. Other voltages available upon request. |
Ähnliche Teilenummer - KS05H3 |
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Ähnliche Beschreibung - KS05H3 |
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