Datenblatt-Suchmaschine für elektronische Bauteile |
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RGCL80TS60D Datenblatt(PDF) 2 Page - Rohm |
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RGCL80TS60D Datenblatt(HTML) 2 Page - Rohm |
2 / 13 page www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Data Sheet RGCL80TS60D lThermal Resistance lIGBT Electrical Characteristics (at T j = 25°C unless otherwise specified) °C/W Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 1.01 V Tj = 25°C - 1.4 1.8 Tj = 175°C - 1.6 - VCE(sat) IC = 40A, VGE = 15V - 200 nA Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 30.0mA 4.5 5.5 6.5 V Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - - V Collector Cut - off Current ICES VCE = 600V, VGE = 0V - - 10 μA Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 600 Conditions Values Unit Min. Typ. Max. Collector - Emitter Saturation Voltage Unit Min. Typ. Max. Thermal Resistance Diode Junction - Case Rθ(j-c) - - 2.28 °C/W Parameter Symbol Values Parameter Symbol 2/11 2015.09 - Rev.A |
Ähnliche Teilenummer - RGCL80TS60D |
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Ähnliche Beschreibung - RGCL80TS60D |
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