Datenblatt-Suchmaschine für elektronische Bauteile |
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DE275-501N16 Datenblatt(PDF) 2 Page - IXYS Corporation |
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DE275-501N16 Datenblatt(HTML) 2 Page - IXYS Corporation |
2 / 3 page DE275-501N16A RF Power MOSFET Directed Energy, Inc. An IXYS Company Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. RG 0.3 Ω Ciss 1800 pF Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz 150 pF Crss 45 pF Td(on) 3 ns Ton VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) 2 ns Td(off) 4 ns Toff 5 ns Qg(on) 50 nC Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 20 nC Qgd 30 nC Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. typ. max. IS VGS = 0 V 6 A ISM Repetitive; pulse width limited by TJM 48 A VSD 1.5 V Trr 200 ns IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% QRM IF = IS, -di/dt = 100A/ µs, VR = 100V 0.6 µC IRM 4 A Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions. DEI MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 |
Ähnliche Teilenummer - DE275-501N16 |
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Ähnliche Beschreibung - DE275-501N16 |
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