2SC4796 datasheet(3/4 Pages) HITACHI

Teilenummer	2SC4796

Bauteilbeschribung	Silicon NPN Triple Diffused

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Hersteller	HITACHI [Hitachi Semiconductor]

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Typical Output Characteristics

5

4

3

2

1

0

410

Collector to Emitter Voltage

V

(V)

CE

2

68

I = 0

B

0.1 A

0.6 A

0.2 A

0.4 A

0.3 A

0.5 A

0.7 A

0.8 A

0.9

A

Tc = 25 °C

DC Current Transfer Ratio

vs. Collector Current

100

50

20

5

10

2

1

10 m 30 m

0.1

0.3

1

3

6

Collector Current

I

(A)

C

Tc = 75 °C

25 °C

–25 °C

V

= 5 V

CE

Collector to Emitter Saturation Voltage

vs. Collector Current

5

2

0.5

1

0.1

0.05

10 m 30 m

0.1

0.3

1

3

6

Collector Current

I

(A)

C

0.2

75 °C

Tc = –25 °C

25 °C

I / I

= 5

C

B

Base to Emitter Saturation Voltage

vs. Collector Current

5

2

0.5

1

0.2

0.1

10 m 30 m

0.1

0.3

1

3

6

Collector Current

I

(A)

C

75 °C

25 °C

Tc = –25 °C

I / I

= 5

C

B

2SC4796

Ähnliche Beschreibung - 2SC4796

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Hitachi Semiconductor	2SC4692	44Kb / 5P	SILICON NPN TRIPLE DIFFUSED DIFFUSED
	2SD2300	32Kb / 5P	Silicon NPN Triple Diffused
	2SD1606	35Kb / 6P	Silicon NPN Triple Diffused
	2SD2107	32Kb / 6P	Silicon NPN Triple Diffused
	2SC1881	35Kb / 6P	Silicon NPN Triple Diffused
	2SC2611	30Kb / 6P	Silicon NPN Triple Diffused
	2SC4499	39Kb / 8P	Silicon NPN Triple Diffused
	2SC4797	20Kb / 4P	Silicon NPN Triple Diffused
	2SC3322	45Kb / 7P	Silicon NPN Triple Diffused
Renesas Technology Corp	2SC1515	160Kb / 5P	Silicon NPN Triple Diffused
Renesas Technology Corp	2SD1126	147Kb / 7P	Silicon NPN Triple Diffused

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