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EC733313 Datenblatt(PDF) 2 Page - E-CMOS Corporation

Teilenummer EC733313
Bauteilbeschribung  -30V, -8A P-Channel MOSFET
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Hersteller  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC733313 Datenblatt(HTML) 2 Page - E-CMOS Corporation

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EC733313
-30V、
、-8A P-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 4
4K25N-Rev.F001
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250µA
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS=-30V,VGS=0V
-1
uA
Gate-Body Leakage Current
IGSS
VGS=±25V,VDS=0V
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250µA
-1.7
-2.2
-3
V
VGS=-4.5V, ID=-7A
13
17
m
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-9A
11
14
m
Forward Transconductance
gFS
VDS=-5V,ID=-10A
18
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
1500
PF
Output Capacitance
Coss
300
PF
Reverse Transfer Capacitance
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
182
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
12
nS
Turn-on Rise Time
tr
11
nS
Turn-Off Delay Time
td(off)
25
nS
Turn-Off Fall Time
tf
VDS=-15V,VGS=-10V,
RGEN=3
ID=1A
10
nS
Total Gate Charge
Qg
22
nC
Gate-Source Charge
Qgs
7
nC
Gate-Drain Charge
Qgd
VDS=-15V,ID=-10A,
VGS=-10V
4.5
nC
Body Diode Reverse Recovery Time
Trr
29
nS
Body Diode Reverse Recovery Charge
Qrr
IF=-10A, dI/dt=100A/µs
15
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-0.74
-1
V
Electrical Characteristics (TA=25℃
℃ unless otherwise noted)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.


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