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EC733338 Datenblatt(PDF) 2 Page - E-CMOS Corporation

Teilenummer EC733338
Bauteilbeschribung  N-Channel MOSFET
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Hersteller  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC733338 Datenblatt(HTML) 2 Page - E-CMOS Corporation

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EC733338
N-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 4
4H07N-Rev.F001
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in
2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250
μA
1.0
1.5
3.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=2.8A
41
65
m
VGS=10V, ID=3.5A
30
47
m
Forward Transconductance
gFS
VDS=5V,ID=2.5A
7
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=15V,VGS=0V,
F=1.0MHz
310
PF
Output Capacitance
Coss
60
PF
Reverse Transfer Capacitance
Crss
30
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
VDS=15V,VGS=10V,RGEN
=6Ω
ID=1A
7
nS
Turn-on Rise Time
tr
12
nS
Turn-Off Delay Time
td(off)
15
nS
Turn-Off Fall Time
tf
5
nS
Total Gate Charge
Qg
VDS=15V,ID=2.5A,VGS=10V
6
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
Qgd
1
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.25A
0.8
1.2
V
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250
μA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
0.5
μA


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