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Datenblatt-Suchmaschine für elektronische Bauteile |
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EC733338 Datenblatt(PDF) 2 Page - E-CMOS Corporation |
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EC733338 Datenblatt(HTML) 2 Page - E-CMOS Corporation |
2 / 4 page ![]() EC733338 N-Channel MOSFET E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 4 4H07N-Rev.F001 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in 2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250 μA 1.0 1.5 3.0 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=2.8A 41 65 m Ω VGS=10V, ID=3.5A 30 47 m Ω Forward Transconductance gFS VDS=5V,ID=2.5A 7 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz 310 PF Output Capacitance Coss 60 PF Reverse Transfer Capacitance Crss 30 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) VDS=15V,VGS=10V,RGEN =6Ω ID=1A 7 nS Turn-on Rise Time tr 12 nS Turn-Off Delay Time td(off) 15 nS Turn-Off Fall Time tf 5 nS Total Gate Charge Qg VDS=15V,ID=2.5A,VGS=10V 6 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge Qgd 1 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.25A 0.8 1.2 V Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250 μA 30 V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 0.5 μA |
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Ähnliche Beschreibung - EC733338 |
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