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EC733339 Datenblatt(PDF) 1 Page - E-CMOS Corporation

Teilenummer EC733339
Bauteilbeschribung  -30V, -4.1A P-Channel MOSFET
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Hersteller  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC733339 Datenblatt(HTML) 1 Page - E-CMOS Corporation

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EC733339
-30V、
、-4.1A P-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4K27N-Rev.F001
VDSS
-30V
RDS(on)
37m
(typ.)
ID
-4.1A
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
-4.1
ID @ TC = 70°C
Continuous Drain Current, VGS @ 10V
-3.5
IDM
Pulsed Drain Current
-20
A
PD @TC = 25°C
Power Dissipation
1.4
W
VDS
Drain-Source Voltage
-30
V
VGS
Gate-to-Source Voltage
± 20
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C
Symbol
Characterizes
Typ.
Max.
Units
RθJA
Junction-to-ambient (t ≤ 10s)
90
°C /W
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high
repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use
in power switching application and a wide variety of other applications.
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Main Product Characteristics:
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Thermal Resistance


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