SI1024X datasheet(1/4 Pages) VISHAY

Teilenummer	SI1024X

Bauteilbeschribung	Dual N-Channel 20-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Si1024X

Vishay Siliconix

New Product

Document Number: 71170

S-03104—Rev. A, 08-Feb-01

www.vishay.com

1

Dual N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (mA)

0.70 @ VGS = 4.5 V

600

20

0.85 @ VGS = 2.5 V

500

1.25 @ VGS = 1.8 V

350

FEATURES

BENEFITS

APPLICATIONS

D Very Small Footprint

D High-Side Switching

D Low On-Resistance: 0.7 W

D Low Threshold: 0.8 V (typ)

D Fast Swtiching Speed: 10 ns

D 1.8-V Operation

D Gate-Source ESD Protection

D Ease in Driving Switches

D Low Offset (Error) Voltage

D Low-Voltage Operation

D High-Speed Circuits

D Low Battery Voltage Operation

D Drivers: Relays, Solenoids, Lamps,

Hammers, Displays, Memories

D Battery Operated Systems

D Power Supply Converter Circuits

D Load/Power Switching Cell Phones, Pagers

Marking Code: C

Top View

3

1

D2

G2

S1

5

2

4

6

D1

S2

G1

SOT-563

SC-89

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

20

Gate-Source Voltage

VGS

"6

V

_

TA = 25_C

515

485

Continuous Drain Current (TJ = 150_C)a

TA = 85_C

ID

370

350

Pulsed Drain Currentb

IDM

650

mA

Continuous Source Current (diode conduction)

IS

450

380

TA = 25_C

280

250

Maximum Power Dissipationa

TA = 85_C

PD

145

130

mW

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

Gate-Source ESD Rating (HBM, Method 3015)

ESD

2000

V

Notes

a.

Surface Mounted on FR4 Board.

b.

Pulse width limited by maximum junction temperature.

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