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BC327-16 Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer BC327-16
Bauteilbeschribung  Amplifier Transistors
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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BC327-16 Datenblatt(HTML) 2 Page - ON Semiconductor

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BC327, BC327−16, BC327−25, BC327−40
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA, IB = 0)
V(BR)CEO
−45
Vdc
Collector −Emitter Breakdown Voltage
(IC = −100 mA, IE = 0)
V(BR)CES
−50
Vdc
Emitter −Base Breakdown Voltage
(IE = −10 mA, IC = 0)
V(BR)EBO
−5.0
Vdc
Collector Cutoff Current
(VCB = −30 V, IE = 0)
ICBO
−100
nAdc
Collector Cutoff Current
(VCE = −45 V, VBE = 0)
ICES
−100
nAdc
Emitter Cutoff Current
(VEB = −4.0 V, IC = 0)
IEBO
−100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V)
BC327
BC327−16
BC327−25
BC327−40
(IC = −300 mA, VCE = −1.0 V)
hFE
100
100
160
250
40
630
250
400
630
Base−Emitter On Voltage
(IC = −300 mA, VCE = −1.0 V)
VBE(on)
−1.2
Vdc
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
VCE(sat)
−0.7
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = −10 V, IE = 0, f = 1.0 MHz)
Cob
11
pF
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)
fT
260
MHz
Figure 1. Thermal Response
t, TIME (SECONDS)
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
qJC(t) = (t) qJC
qJC = 100°C/W MAX
qJA(t) = r(t) qJA
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
SINGLE PULSE


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