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IRFZ46NL Datenblatt(PDF) 1 Page - International Rectifier |
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IRFZ46NL Datenblatt(HTML) 1 Page - International Rectifier |
1 / 10 page IRFZ46NS IRFZ46NL HEXFET® Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Parameter Typ. Max. Units RθJC Junction-to-Case 1.4 RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** 40 Thermal Resistance °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
53 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
37 A IDM Pulsed Drain Current
180 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 107 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 28 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt
5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devicedesignthatHEXFETpowerMOSFETsarewellknown for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodatingdiesizesuptoHEX-4.Itprovidesthehighest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ46NL) is available for low- profile applications. Description VDSS = 55V RDS(on) = 0.0165Ω ID = 53A 2 D Pak TO-262 S D G 04/08/04 www.irf.com 1 PD - 91305C |
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