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NTGS3441T1 Datenblatt(PDF) 2 Page - ON Semiconductor |
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NTGS3441T1 Datenblatt(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTGS3441T1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 4 & 5) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = −10 mA) V(BR)DSS −20 − − Vdc Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 70°C) IDSS − − − − −1.0 −5.0 mAdc Gate−Body Leakage Current (VGS = −8.0 Vdc, VDS = 0 Vdc) IGSS − − −100 nAdc Gate−Body Leakage Current (VGS = +8.0 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) VGS(th) −0.45 −1.05 −1.50 Vdc Static Drain−Source On−State Resistance (VGS = −4.5 Vdc, ID = −3.3 Adc) (VGS = −2.5 Vdc, ID = −2.9 Adc) RDS(on) − − 0.069 0.117 0.090 0.135 W Forward Transconductance (VDS = −10 Vdc, ID = −3.3 Adc) gFS − 6.8 − mhos DYNAMIC CHARACTERISTICS Input Capacitance Ciss − 480 − pF Output Capacitance (VDS = −5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 265 − pF Reverse Transfer Capacitance f = 1.0 MHz) Crss − 100 − pF SWITCHING CHARACTERISTICS Turn−On Delay Time td(on) − 13 25 ns Rise Time (VDD = −20 Vdc, ID = −1.6 Adc, tr − 23.5 45 ns Turn−Off Delay Time (VDD = −20 Vdc, ID = −1.6 Adc, VGS = −4.5 Vdc, Rg = 6.0 W) td(off) − 27 50 ns Fall Time tf − 24 45 ns Total Gate Charge Qtot − 6.2 14 nC Gate−Source Charge (VDS = −10 Vdc, VGS = −4.5 Vdc, ID = −3.3 Adc) Qgs − 1.3 − nC Gate−Drain Charge ID = −3.3 Adc) Qgd − 2.5 − nC BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage (IS = −1.6 Adc, VGS = 0 Vdc) VSD − −0.88 −1.2 Vdc Diode Forward On−Voltage (IS = −3.3 Adc, VGS = 0 Vdc) VSD − −0.98 − Vdc Reverse Recovery Time (IS = −1.6 Adc, dIS/dt = 100 A/ms) trr − 30 60 ns 4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge is mandatory. |
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