TC55VEM316AXBN40 datasheet(3/14 Pages) TOSHIBA

Teilenummer	TC55VEM316AXBN40

Bauteilbeschribung	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Download	14 Pages

Scroll/Zoom	100%

Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

Logo

3 / 14 page

TC55VEM316AXBN40,55

2002-07-23

3/14

OPERATING MODE

MODE

1

CE

CE2

OE

R/W

LB

UB

I/O1~I/O8

I/O9~I/O16

POWER

L

H

L

H

L

Output

IDDO

L

H

L

H

L

High-Z

Output

IDDO

Read

L

H

L

H

L

H

Output

High-Z

IDDO

L

H

*

L

Input

IDDO

L

H

*

L

H

L

High-Z

Input

IDDO

Write

L

H

*

L

H

Input

High-Z

IDDO

L

H

L

High-Z

IDDO

L

H

L

High-Z

IDDO

Output Deselect

L

H

L

H

High-Z

IDDO

H

*

High-Z

IDDS

*

L

*

High-Z

IDDS

Standby

*

H

High-Z

IDDS

* = don't care

H = logic high

L = logic low

MAXIMUM RATINGS

SYMBOL

RATING

VALUE

UNIT

VDD

Power Supply Voltage

−0.3~4.2

V

VIN

Input Voltage

−0.3*~4.2

V

VI/O

Input/Output Voltage

−0.5~VDD + 0.5

V

PD

Power Dissipation

0.6

W

Tsolder

Soldering Temperature (10s)

260

°C

Tstg

Storage Temperature

−55~125

°C

Topr

Operating Temperature

−40~85

°C

*:

−2.0 V when measured at a pulse width of 20ns

DC RECOMMENDED OPERATING CONDITIONS (Ta

==== −−−−40° to 85°C)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

VDD

Power Supply Voltage

2.3



3.6

V

VDD = 2.3 V~2.7 V

2.0

VIH

Input High Voltage

VDD = 2.7 V~3.6 V

2.2



VDD + 0.3

V

VIL

Input Low Voltage

−0.3*



VDD × 0.24

V

VDH

Data Retention Supply Voltage

1.5



3.6

V

*:

−2.0 V when measured at a pulse width of 20ns

Ähnliche Beschreibung - TC55VEM316AXBN40

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Toshiba Semiconductor	TC58DVG02A1FT00	453Kb / 44P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55NEM208A	107Kb / 10P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC58512FT	420Kb / 43P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TH58100FT	421Kb / 43P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC51WHM616AXBN70	207Kb / 11P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VBM316AFTN	216Kb / 15P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC58NVG1S3BFT00	315Kb / 37P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VCM216ASTN40	201Kb / 14P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC58FVM5T2AFT65	799Kb / 63P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VD1618FF-133	888Kb / 20P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

More results

TC55VEM316AXBN40 Datenblatt(PDF) 3 Page - Toshiba Semiconductor

TC55VEM316AXBN40 Datenblatt(HTML) 3 Page - Toshiba Semiconductor

Ähnliche Teilenummer - TC55VEM316AXBN40

Ähnliche Beschreibung - TC55VEM316AXBN40

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datenblatt Download

Link URL