Datenblatt-Suchmaschine für elektronische Bauteile |
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TLP321 Datenblatt(PDF) 4 Page - Toshiba Semiconductor |
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TLP321 Datenblatt(HTML) 4 Page - Toshiba Semiconductor |
4 / 9 page TLP321,TLP321-2,TLP321-4 2002-09-25 4 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 12 48 V Forward current IF ― 16 20 mA Collector current IC ― 1 10 mA Operating temperature Topr -25 ― 85 °C Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Condition Min. Typ. Max. Unit Forward voltage VF IF =10 mA 1.0 1.15 1.3 V Reverse current IR VR =5 V — — 10 µA Capacitance CT V = 0, f = 1MHz — 30 — pF Collector -emitter breakdown voltage V(BR) CEO IC = 0.5mA 80 — — V Emitter -collector breakdown voltage V(BR) ECO IE = 0.1mA 7 — — V VCE = 48V — 10 100 nA Collector dark current ICEO VCE = 48V, Ta = 85°C — 2 50 µA Capacitance (collector to emitter) CCE V = 0, f = 1MHz — 10 — pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Condition MIn. Typ. Max. Unit 50 — 600 Current transfer ratio IC / IF IF = 5mA, VCE = 5V Rank GB 100 — 600 % — 60 — Saturated CTR IC / IF (sat) IF = 1mA, VCE = 0.4V Rank GB 30 — — % IC = 2.4mA, IF = 8mA — — 0.4 — 0.2 — Collector -emitter saturation voltage VCE (sat) IC = 0.2mA, IF = 1mA Rank GB — — 0.4 V |
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