Datenblatt-Suchmaschine für elektronische Bauteile |
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2N4427 Datenblatt(PDF) 1 Page - Advanced Semiconductor |
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2N4427 Datenblatt(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 20 V BVCER IC = 5.0 mA RBE = 10 Ω 40 V BVEBO IC = 100 µA 3.5 V ICEX VCE = 40 V VBE = -1.5 V 0.1 mA IEBO VEB = 20 V 0.1 mA hFE VCE = 5.0 V IC = 100 mA IC = 380 mA 10 5.0 200 --- VCE(SAT) IC = 100 mA IB = 20 mA 0.5 V ft VCE = 15 V IC = 50 mA f = 200 MHz 500 MHz COB VCB = 12 V f = 1.0 MHz 4.0 pF Pin ηηηη VCC = 12 V f = 175 MHz Pout = 1.0 W 35 75 mW % NPN SILICON HIGH FREQUENCY TRANSISTOR 2N4427 PACKAGE STYLE TO-39 1 = EMITTER 2 = BASE 3 = COLLECTOR DESCRIPTION: The ASI 2N4427 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 400 mA VCE 20 V PDISS 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθ JC 50 °C/W |
Ähnliche Teilenummer - 2N4427 |
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Ähnliche Beschreibung - 2N4427 |
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