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2N5062RLRA Datenblatt(PDF) 3 Page - ON Semiconductor |
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2N5062RLRA Datenblatt(HTML) 3 Page - ON Semiconductor |
3 / 8 page 2N5060 Series http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated VDRM or VRRM)TC = 25°C TC = 110°C IDRM, IRRM − − − − 10 50 mA mA ON CHARACTERISTICS *Peak Forward On−State Voltage (Note 4) (ITM = 1.2 A peak @ TA = 25°C) VTM − − 1.7 V Gate Trigger Current (Continuous DC) (Note 5) *(VAK = 7.0 Vdc, RL = 100 W)TC = 25°C TC = −40°C IGT − − − − 200 350 mA Gate Trigger Voltage (Continuous DC) (Note 5) TC = 25°C *(VAK = 7.0 Vdc, RL = 100 W)TC = −40°C VGT − − − − 0.8 1.2 V *Gate Non−Trigger Voltage (VAK = Rated VDRM, RL = 100 W)TC = 110°C VGD 0.1 − − V Holding Current (Note 5) TC = 25°C *(VAK = 7.0 Vdc, initiating current = 20 mA) TC = −40°C IH − − − − 5.0 10 mA Turn-On Time Delay Time Rise Time (IGT = 1.0 mA, VD = Rated VDRM, Forward Current = 1.0 A, di/dt = 6.0 A/ ms td tr − − 3.0 0.2 − − ms Turn-Off Time (Forward Current = 1.0 A pulse, Pulse Width = 50 ms, 0.1% Duty Cycle, di/dt = 6.0 A/ ms, dv/dt = 20 V/ ms, IGT = 1 mA) 2N5060, 2N5061 2N5062, 2N5064 tq − − 10 30 − − ms DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (Rated VDRM, Exponential) dv/dt − 30 − V/ ms 3. RGK = 1000 W is included in measurement. 4. Forward current applied for 1 ms maximum duration, duty cycle p 1%. 5. RGK current is not included in measurement. *Indicates JEDEC Registered Data. + Current + Voltage VTM IDRM at VDRM IH Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Voltage Current Characteristic of SCR Anode + on state Reverse Blocking Region (off state) Reverse Avalanche Region Anode − Forward Blocking Region IRRM at VRRM (off state) |
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