74LVC1G57GV datasheet(11/18 Pages) PHILIPS

Teilenummer	74LVC1G57GV

Bauteilbeschribung	Low-power configurable multiple function gate

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Hersteller	PHILIPS [NXP Semiconductors]

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11 / 18 page

9397 750 13722

Product data sheet

Rev. 01 — 6 September 2004

11 of 18

Philips Semiconductors

74LVC1G57

Low-power conﬁgurable multiple function gate

[1]

Typical values are measured at Tamb =25 °C.

15. Waveforms transfer characteristics

VH

hysteresis voltage (VT+ − VT−)

see Figure 13, 14, 15 and 16

VCC = 1.8 V

0.30

0.48

0.62

V

VCC = 2.3 V

0.40

0.64

0.80

V

VCC = 3.0 V

0.50

0.75

1.00

V

VCC = 4.5 V

0.71

0.97

1.20

V

VCC = 5.5 V

0.71

1.13

1.40

V

Tamb = −40 °C to +125 °C

VT+

positive-going threshold

voltage

see Figure 13, 14, 15 and 16

VCC = 1.8 V

0.67

-

1.20

V

VCC = 2.3 V

1.08

-

1.60

V

VCC = 3.0 V

1.47

-

2.00

V

VCC = 4.5 V

2.13

-

2.74

V

VCC = 5.5 V

2.58

-

3.33

V

VT−

negative-going threshold

voltage

see Figure 13, 14, 15 and 16

VCC = 1.8 V

0.30

-

0.75

V

VCC = 2.3 V

0.58

-

1.03

V

VCC = 3.0 V

0.80

-

1.33

V

VCC = 4.5 V

1.21

-

1.93

V

VCC = 5.5 V

1.45

-

2.32

V

VH

hysteresis voltage (VT+ − VT−)

see Figure 13, 14, 15 and 16

VCC = 1.8 V

0.23

-

0.62

V

VCC = 2.3 V

0.34

-

0.80

V

VCC = 3.0 V

0.44

-

1.00

V

VCC = 4.5 V

0.65

-

1.20

V

VCC = 5.5 V

0.65

-

1.40

V

Table 13:

Transfer characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VT+ and VT− limits are at 70 % and

20 %.

Fig 13. Transfer characteristic.

Fig 14. Deﬁnition of VT+, VT− and VH.

mna207

VO

VI

VH

VT+

VT−

mna208

VO

VI

VH

VT+

VT−

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