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BC618 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BC618 Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 7 page 2004 Nov 05 4 Philips Semiconductors Product specification NPN Darlington transistor BC618 CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 60 V; IE =0 A −− 50 nA ICES collector-emitter cut-off current VBE = 0 V; VCE =60V −− 50 µA IEBO emitter-base cut-off current VEB = 10 V; IC =0 A −− 50 nA hFE DC current gain VCE = 5 V; see Fig.2 IC = 1 mA 2000 −− IC = 10 mA 4000 −− IC = 200 mA 10000 − 70000 VCEsat collector-emitter saturation voltage IC = 200 mA; IB = 0.2 mA −− 1.1 V VBEsat base-emitter saturation voltage IC = 200 mA; IB = 0.2 mA −− 1.6 V Cc collector capacitance VCB = 30 V; IE =0 A − 3.5 − pF fT transition frequency VCE =5V; IC = 500 mA; f = 100 MHz 155 −− MHz handbook, full pagewidth 0 60000 80000 20000 40000 MGD837 10−1 1 IC (mA) hFE 10 102 103 Fig.2 DC current gain; typical values. VCE =2V. |
Ähnliche Teilenummer - BC618 |
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Ähnliche Beschreibung - BC618 |
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