BF1208 datasheet(2/22 Pages) PHILIPS

Teilenummer	BF1208

Bauteilbeschribung	Dual N-channel dual gate MOSFET

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Hersteller	PHILIPS [NXP Semiconductors]

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9397 750 14254

Product data sheet

Rev. 01 — 16 March 2005

2 of 22

Philips Semiconductors

BF1208

Dual N-channel dual gate MOSFET

1.4 Quick reference data

[1]

Tsp is the temperature at the soldering point of the source lead.

2.

Pinning information

Table 1:

Quick reference data

Per MOSFET unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max Unit

VDS

drain-source voltage (DC)

-

6

V

ID

drain current (DC)

-

30

mA

Ptot

total power dissipation

Tsp ≤ 109 °C

[1] -

-

180

mW

|yfs|

forward transfer admittance

f = 1 MHz

ampliﬁer A; ID =19mA

26

31

41

mS

ampliﬁer B; ID =13mA

28

33

43

mS

Ciss(G1)

input capacitance at gate1

f = 1 MHz

ampliﬁer A

-

2.2

2.7

pF

ampliﬁer B

-

2.0

2.5

pF

Crss

reverse transfer capacitance f = 1 MHz

-

20

-

fF

NF

noise ﬁgure

ampliﬁer A; f = 400 MHz

-

1.3

1.9

dB

ampliﬁer B; f = 800 MHz

-

1.4

2.1

dB

Xmod

cross-modulation

input level for k = 1 % at

40 dB AGC

ampliﬁer A

100

105

-

dB

µV

ampliﬁer B

100

103

-

dB

µV

Tj

junction temperature

-

150

°C

Table 2:

Discrete pinning

Description

Simpliﬁed outline

Symbol

1

gate1 (AMP A)

2

gate2

3

gate1 (AMP B)

4

drain (AMP B)

5

source

6

drain (AMP A)

12

3

4

5

6

sym089

G1B

G1A

G2

S

DA

DB

AMP B

AMP A

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