Datenblatt-Suchmaschine für elektronische Bauteile |
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TSM2NB60CP Datenblatt(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM2NB60CP Datenblatt(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 9 page TSM2NB60CP TSM2NB60CH Taiwan Semiconductor Document Number: DS_P0000070 2 Version: H1706 THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 2.87 oC/W Junction to Ambient Thermal Resistance RӨJA 110 oC/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static (Note 5) Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.5 3.6 4.5 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 uA Drain-Source On-State Resistance VGS = 10V, ID = 1A RDS(ON) -- 3.9 4.4 Ω Forward Transfer Conductance VDS = 40V, ID = 1A gfs -- 1.5 -- S Dynamic (Note 6) Total Gate Charge VDS = 480V, ID = 2A, VGS = 10V Qg -- 9.4 -- nC Gate-Source Charge Qgs -- 2.2 -- Gate-Drain Charge Qgd -- 4.7 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 249 -- pF Output Capacitance Coss -- 30.7 -- Reverse Transfer Capacitance Crss -- 5 -- Gate Resistance F = 1MHz, open drain Rg -- 8.5 -- Ω Switching (Note 7) Turn-On Delay Time VGS = 10V, ID = 2A, VDD = 300V, RG =25Ω td(on) -- 9.1 -- ns Turn-On Rise Time tr -- 9.8 -- Turn-Off Delay Time td(off) -- 17.4 -- Turn-Off Fall Time tf -- 12.4 -- |
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