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TSM088NA03CR Datenblatt(PDF) 3 Page - Taiwan Semiconductor Company, Ltd

Teilenummer TSM088NA03CR
Bauteilbeschribung  Low gate charge for fast power switching
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Hersteller  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM088NA03CR Datenblatt(HTML) 3 Page - Taiwan Semiconductor Company, Ltd

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TSM088NA03CR
Taiwan Semiconductor
3
Version: C1610
0.6
0.8
1
1.2
1.4
1.6
1.8
-75
-50
-25
0
25
50
75
100
125
150
0
8
16
24
32
40
0
1
2
3
4
5
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0
8
16
24
32
40
0
2
4
6
8
10
0
3
6
9
12
15
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
Qg, Gate Charge (nC)
TJ, Junction Temperature (°C)
150℃
25℃
VGS=10V
VDS=15V
ID=13A
VGS=10V
ID=13A
VGS=4.5V
0
8
16
24
32
40
0
1
2
3
4
V
GS=10V
V
GS=5V
V
GS=4.5V
V
GS=4V
V
GS=3.5V
-55℃
VGS, Gate to Source Voltage (V)
0
0.01
0.02
0.03
0.04
0.05
0.06
3
4
5
6
7
8
9
10
I
D=13A


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