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FDC796N Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDC796N Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page February 2004 2004 Fairchild Semiconductor Corporation FDC796N Rev D (W) FDC796N 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter • Power management • Load switch Features • 12.5 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • Low gate charge • High power and current handling capability • Fast switching speed. SuperSOT-6 TM FLMP S S S G S S 3 2 1 4 5 6 Bottom Drain Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 ID Drain Current – Continuous (Note 1a) 12.5 A – Pulsed 40 Maximum Power Dissipation (Note 1a) 2 W PD (Note 1b) 1.1 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 60 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 111 RθJC Thermal Resistance, Junction-to-Case 0.5 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .796 FDC796N 7’’ 8mm 3000 units |
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