LS103A

LS103B

LS103C

35

0mA Schottky

Barrier Diode

Features

Small surface mounting type(Quadro Melf)

High reliability

Low reverse curent and low forward voltage

Parameter

Symbol

Value

Units

Power Dissipation at

25

400

mW

Repetitive peak reverse voltage

Storage Temperature Range

-65 to

175

Thermal Resistance( Junction

to Ambient)

300

K/W

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Maximum

Unit

Forward Voltage

0.37

V

Applications

Low current rectification and high speed switching

Quadro MELF

SUGGESTED SOLDER

PAD LAYOUT

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.130

.146

3.30

3.70

B

.008

.016

.20

.40

C

.055

.063

1.40

1.60

∅

D

.067

1.70

.155”

.022”

.065”

A

B

Cathode Mark

C

D

omponents

20736 Marilla Street Chatsworth



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MCC

Revision: B

2012/01/01

TM

Micro Commercial Components

20~40Volt

Maximum Ratings*

LS103A

40

V

LS103B

30

V

LS103C

20

V

Forward current

350

mA

Repetitive peak forward current

s

1

A

0.60

Reverse current

5

uA

5

5

Diode capacitance

50

pF

Reverse recovery time

10

ns

1 of 4

LS103A

LS103B

LS103C

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisture Sensitivity Level 1

•

Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates

Compliant. See ordering information)

Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.